Wenjuan Huo

Patent Attorney/
Professional fields
Patent Application and Written
Technical fields
Semiconductor Devices, Semiconductor Materials, Optical electronics, Microelectronics
Profile
Mrs. Huo is a master's degree graduates in 2014, during the period of graduate, engaged in InP base transistor laser and InP double heterojunction phototransistor detector, including device structure simulation device design and fabrication processes, the results of the research are published in Optics Express, Journal of physics Chinese laser. After three years of study, I learned solid basic knowledge of semiconductor device , the process flow of semiconductor devices lay. These lay a good foundation of for patent working.
Education and experience
  • 2014.08–Now Beijing Kangxin intellectual property agency co, LTD. Patent Attorney
  • 201209– 201407 The Chinese academy of sciences semiconductor Joint training
  • 201109– 201207 Beijing university of technology Microelectronics and solid-state electronics
  • In 2014, Outstanding graduates of Beijing, Outstanding master's thesis of Beijing university of technology, First prize in science and technology innovation science and technology innovation excellence award
  • In2013, Second prize of scientific and technological innovation, Outstanding graduate award
  • In 2012, National scholarships, Innovation scholarship of Ruiyuan DE, Learning excellence awar d second prize of Motivational practices of science and technology
Memberships
Honors and awards
Published articles
  • Huo W, Liang S, Zhang C, et al. Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors[J]. Optics express, 2014, 22(2): 1806-1814.

  • Huo W, Liang S, Zhang C, et al. research on uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector[J]. Chinese journal of physics, 2013, 62(22): 228501-228501
  • Wavelength selectable DFB laser based on non-uniform multiple quantum wells [J]. Chinese journal of lasers, 2013, 39(10): 6-10
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