Wenjuan Huo

/Patent Agent
Professional fields
Patent Application and Written
Technical fields
Semiconductor Devices, Semiconductor Materials, Optical electronics, Microelectronics
Profile
Mrs. Huo is a master's degree graduates in 2014, during the period of graduate, engaged in InP base transistor laser and InP double heterojunction phototransistor detector, including device structure simulation device design and fabrication processes, the results of the research are published in Optics Express, Journal of physics Chinese laser. After three years of study, Mrs. Huo learned solid basic knowledge of semiconductor device , the process flow of semiconductor devices lay. These lay a good foundation of for patent working.
Education and experience
  • 2014.08–Now Kangxin Partners P.C.
  • 201209– 201407 The Chinese academy of sciences semiconductor
  • 201109– 201207 Beijing university of technology Microelectronics and solid-state electronics
Memberships
Honors and awards
Published articles
  • Huo W, Liang S, Zhang C, et al. Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors[J]. Optics express, 2014, 22(2): 1806-1814.

  • Huo W, Liang S, Zhang C, et al. research on uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector[J]. Chinese journal of physics, 2013, 62(22): 228501-228501
  • Wavelength selectable DFB laser based on non-uniform multiple quantum wells [J]. Chinese journal of lasers, 2013, 39(10): 6-10
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